Masterthesis: GaN-Based RF Power Devices & Circuits
Fraunhofer-GesellschaftJob Description
At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us?
In our microelectronics department we offer a master thesis in the field of GaN power electronics.
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Submit your application for the Masterthesis: GaN-Based RF Power Devices & Circuits position at Fraunhofer-Gesellschaft.
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